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BSP170 |
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| Part Number | BSP170 |
| Manufacturer | Siemens Semiconductor Group |
| Description | BSP 170 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Avalanche rated • VGS(th) = -2.1...-4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 170 Type BSP 170 VDS -60 V ID -1.7 A ... |
| Features |
b 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
-60 -3 -0.1 -10 -10 0.255 -4
V
VGS = 0 V, ID = -0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
-2.1
VGS=VDS, ID = -1 mA
Zero gate voltage drain current
IDSS
-1 -100
µA
VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
-100
nA Ω 0.35
VGS = -20 V, VDS = 0 V
Drain-Source on-state resist... |
| Document |
 BSP170 Data Sheet
PDF 101.71KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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