BSP125 |
Part Number | BSP125 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP125 Information For further information on technology, delivery terms and conditions and prices please contact y... |
Features |
BSP125
Symbol min. RthJS RthJA -
Values typ. max. 25
Unit
K/W
-
115 70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS=0, ID=0.25mA
Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 600 1.3
Values typ. 1.9 max. 2.3
Unit
V
Gate threshold voltage, V GS = VDS
ID=94µA
Zero gate voltage drain current
VDS=600V, VGS=0, Tj =25°C VDS=600V, VGS=0, Tj =125°C
µA 10 26 25 0.1 5 100 60 45 nA Ω
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.11A
Drain-... |
Document |
BSP125 Data Sheet
PDF 119.24KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
2 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
3 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
4 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) | |
5 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor | |
6 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) | |
7 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
8 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
9 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor | |
10 | BSP129 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |