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BSP122 |
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| Part Number | BSP122 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transf... |
| Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain Fig.1 Simplified outline (SOT223) and symbol. DESCRIPTION QUICK REFERENCE DATA SYMBOL VDS ID RDS(on) VGS(th) PARAMETER drain-source voltage DC drain current drain-source on-resistance gate-source threshold voltage BSP122 MAX. 200 ... |
| Document |
 BSP122 Data Sheet
PDF 58.57KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 2 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 3 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
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| 4 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
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| 5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
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| 6 | BSP125 |
Infineon Technologies AG |
SIPMOS Power-Transistor |
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| 7 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 8 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 9 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 10 | BSP129 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
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Desde 2024. D4U Semiconductor.
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