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BSP121 |
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| Part Number | BSP121 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and li... |
| Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP121 Transfer admittance ID = 400 mA; VDS = 25 V Yfs min. typ. QUICK REFERENCE DATA Drain source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 400 mA; VGS = 10 V RDS(on) typ. max. Ptot max. VDS ±VGSO ID max. max. max. BSP121 200 V 20 V 350 mA 1.5 W 4.5 Ω 6.0 Ω 200 mS 350 mS PIN CONFIGURATION handbook, halfpage 4 d g 1 Top view 2 3 MAM05... |
| Document |
 BSP121 Data Sheet
PDF 75.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP120 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 2 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 3 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
|
| 4 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
| 5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
|
| 6 | BSP125 |
Infineon Technologies AG |
SIPMOS Power-Transistor |
|
| 7 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 8 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 9 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 10 | BSP129 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
|
Desde 2024. D4U Semiconductor.
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