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BSP120 |
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| Part Number | BSP120 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line current interrupter in telephone sets and for application in relay, high-speed and li... |
| Features |
• Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown QUICK REFERENCE DATA Drain-source voltage Drain-current (DC) Drain-source ON-resistance ID = 250 mA; VGS = 10 V Gate threshold voltage PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP120 PIN CONFIGURATION RDS(on) VGS(th) typ. max. max. VDS ID max. max. BSP120 200 V 250 mA 7 Ω 12 Ω 2.8 V handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS... |
| Document |
 BSP120 Data Sheet
PDF 65.79KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BSP121 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 2 | BSP122 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 3 | BSP123 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode Logic Level) |
|
| 4 | BSP123 |
Infineon Technologies AG |
SIPMOS Small-Signal-Transistor |
|
| 5 | BSP125 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Enhancement mode) |
|
| 6 | BSP125 |
Infineon Technologies AG |
SIPMOS Power-Transistor |
|
| 7 | BSP126 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 8 | BSP127 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 9 | BSP128 |
NXP |
N-channel enhancement mode vertical D-MOS transistor |
|
| 10 | BSP129 |
Siemens Semiconductor Group |
SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) |
|
Desde 2024. D4U Semiconductor.
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