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BUZ111SL |
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| Part Number | BUZ111SL |
| Manufacturer | Siemens Semiconductor Group |
| Description | BUZ111SL SPP80N05L SIPMOS ® Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G ... |
| Features |
ase Thermal resistance, junction - ambient IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJA
-55 ... + 175 -55 ... + 175
°C
≤ 0.6 ≤ 62
55 / 175 / 56
K/W
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0 V, ID = 0.25 mA, Tj = 25 °C
V (BR)DSS
V 55 -
Gate threshold voltage
V GS=V DS, ID = 240 µA
V GS(th)
1.2
IDSS
1.6
2 µA
Zero gate voltage drain current
V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, T... |
| Document |
 BUZ111SL Data Sheet
PDF 120.03KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ111S |
Siemens Semiconductor Group |
Power Transistor |
|
| 2 | BUZ11 |
STMicroelectronics |
N-CHANNEL MOSFET |
|
| 3 | BUZ11 |
Siemens Semiconductor Group |
Power Transistor |
|
| 4 | BUZ11 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | BUZ11 |
ON Semiconductor |
N-Channel Power MOSFET |
|
| 6 | BUZ11 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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