BUZ111S Siemens Semiconductor Group Power Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BUZ111S

Siemens Semiconductor Group
BUZ111S
BUZ111S BUZ111S
zoom Click to view a larger image
Part Number BUZ111S
Manufacturer Siemens Semiconductor Group
Description BUZ111S SPP80N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 Pin 3 G D S Type VDS...
Features ance, junction - ambient IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJA -55 ... + 175 -55 ... + 175 °C ≤ 0.6 ≤ 62 55 / 175 / 56 K/W Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 55 - Gate threshold voltage V GS=V DS, ID = 240 µA V GS(th) 2.1 IDSS 3 4 µA Zero gate voltage drain current V DS = 50 V, V GS = 0 V, Tj = -40 °C V DS = 50 V, V GS = 0 V, Tj = 25 °C V DS = 50 V, V GS = 0 V, Tj = 150 °C IGSS 0....

Document Datasheet BUZ111S Data Sheet
PDF 121.80KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BUZ111SL
Siemens Semiconductor Group
Power Transistor Datasheet
2 BUZ11
STMicroelectronics
N-CHANNEL MOSFET Datasheet
3 BUZ11
Siemens Semiconductor Group
Power Transistor Datasheet
4 BUZ11
Intersil Corporation
N-Channel Power MOSFET Datasheet
5 BUZ11
ON Semiconductor
N-Channel Power MOSFET Datasheet
6 BUZ11
Fairchild Semiconductor
N-Channel Power MOSFET Datasheet
More datasheet from Siemens Semiconductor Group
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad