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BUT12 |
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| Part Number | BUT12 |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. andbook, halfpage BUT12; BUT12A APPLICATIONS • Converters • Inverters • Switching regulators • Motor control sy... |
| Features |
C; see Fig.2 resistive load; see Figs 12 and 13 6 5 8 20 125 0.8 A A A A W µs see Fig.8 open base 400 450 1.5 V V V PARAMETER collector-emitter peak voltage VBE = 0 850 1000 V V CONDITIONS MAX. UNIT
THERMAL CHARACTERISTICS SYMBOL Rth j-mb PARAMETER thermal resistance from junction to mounting base VALUE 1 UNIT K/W
1997 Aug 13
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCESM BUT12 BUT12A VCEO collector-emitter voltage BUT12 BUT12A ICsat collector saturation current... |
| Document |
 BUT12 Data Sheet
PDF 100.77KB |
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