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2SB649 |
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| Part Number | 2SB649 |
| Manufacturer | LGE |
| Description | 2SB649/2SB649A(PNP) TO-126 Transistor TO-126 1. EMITTER 2. COLLECTOR 7.400 7.800 2.500 1.100 2.900 1.500 Features 3 2 1 3. BASE Low frequency power amplifier complementary pair with 2SD669/A ... |
| Features |
3 2
1
3. BASE
Low frequency power amplifier complementary pair with 2SD669/A
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-180
V
VCEO
Collector-Emitter Voltage 2SB649
-120
V
2SB649A
-160
VEBO
Emitter-Base Voltage
-5 V
IC
Collector Current –Continuous -1.5 A PC Collector Power Dissipation 1 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless 3.000 3.200 10.60 0 11.00 0 15.30 0 15.70 0 3.900 4.100 2.100 2.300 1.170 1.370 0.000 0.300 0.660 0.... |
| Document |
 2SB649 Data Sheet
PDF 199.20KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB642 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 2 | 2SB643 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 3 | 2SB644 |
Panasonic Semiconductor |
Silicon PNP epitaxial planer type Transistor |
|
| 4 | 2SB645 |
INCHANGE |
PNP Transistor |
|
| 5 | 2SB645 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | 2SB646 |
Hitachi |
Silicon PNP Epitaxial Transistor |
|
Desde 2024. D4U Semiconductor.
|