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2SA1300 BLUECOLOUR PNP Silicon Epitaxial Planar Transistor Datasheet

1U30S-MB2-SA1-300 USB3 CABLE ASSEMBLY 3 METER


BLUECOLOUR
2SA1300
Part Number 2SA1300
Manufacturer BLUECOLOUR
Description 2SA1300 PNP Silicon Epitaxial Planar Transistor for strobo flash and medium power amplifier applications. The transistor is subdivided into three groups, Y, G and L, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations. 1. Emit...
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Document Datasheet 2SA1300 datasheet pdf (66.80KB)
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DigiKey
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100 units: 78762.29 KRW
50 units: 83361.5 KRW
25 units: 86236.08 KRW
10 units: 89686.2 KRW
1 units: 97728 KRW
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2SA1300 Distributor

part
3M Interconnect
1U30S-MB2-SA1-300
USB3 CABLE ASSEMBLY 3 METER
100 units: 78762.29 KRW
50 units: 83361.5 KRW
25 units: 86236.08 KRW
10 units: 89686.2 KRW
1 units: 97728 KRW
Distributor
DigiKey

18 In Stock
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part
3M Interconnect
1U30A-MB2-SA1-300-CE
USB Cables / IEEE 1394 Cables USB3 VISION IND CAMERA CABLE
1 units: 38.66 USD
10 units: 34.63 USD
25 units: 33.14 USD
50 units: 32.07 USD
100 units: 31 USD
250 units: 29.29 USD
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Mouser Electronics

92 In Stock
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part
3M
1U30S-MB2-SA1-300 (ALTERNATE: 04550309217037)
Cable, Assembly, USB Micro B plug to USB Standard A, 3M length, Black | 3M 1U30S-MB2-SA1-300
25 units: 62.28 USD
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RS

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3M Interconnect
7100134187
USB Cables / IEEE 1394 Cables USB3 VISON CAMERA CBL ASSY
1 units: 43.75 USD
10 units: 40.15 USD
25 units: 38.6 USD
50 units: 37.32 USD
100 units: 36.4 USD
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TTI

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3M Interconnect
1U30G-MB2-SA1-300
- Bulk (Alt: 7100193533)
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2SA1300 Similar Datasheet

Part Number Description
2SA1300
manufacturer
Toshiba Semiconductor
TRANSISTOR
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Medium Power Amplifier Applications 2SA1300 Unit: mm · High DC current gain and excellent hFE linearity : hFE (1) = 140~600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) · Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −2 A, IB = −50 mA) Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage DC Collector current Pulsed (Note 1) Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCES VCEO VEBO IC ICP IB PC Tj Tstg -20 -20 -1...
2SA1300
manufacturer
UTC
PNP EPITAXIAL SILICON TRANSISTOR
*Strobo Flash Applications. *Medium Power Amplifier Applications. FEATURES *High DC Current Gain and Excellent hFE Linearity. *hFE(1)=140-600, (VCE= -1V,IC= -0.5A) *hFE(2)=60(Min.),120(Typ.),(VCE= -1V,IC= -4A) *Low Saturation Voltage *VCE (sat)= -0.5V(Max.), (IC= -2A,IE= -50mA) 1 SOT-89 1: Emitter 2: Collector 3:Base ABSOLUTE MAXIMUM RATINGS (TA=25°C) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulsed (Note) www.DataSheet4U.com SYMBOL VCBO VCES VCEO VEBO Ic lcP IB Pc Tj Tstg RATIOS -20 -20 -10 -6 -2 -5 -2 750 150 -55~150 UNIT V V V A A mW °C °C Base Current Collector Power Dissipation Junction Temperature Storage Temperature R...
2SA1300
manufacturer
TRANSYS
Plastic-Encapsulated Transistors
Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA1300 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.75 W (Tamb=25℃) Collector current A ICM : -2 Collector-base voltage V V(BR)CBO : -20 Operating and storage junction temperature range TJ : 150℃ Tstg: -55℃ to +150℃ 1. EMITTER 2. COLLECTOR 3. BASE 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE ...
2SA1300
manufacturer
Dc Components
PNP Transistor
Designed for use Strobe flash and medium power amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base .190(4.83) .170(4.33) .190(4.83) .170(4.33) TO-92 2 Typ 2 Typ o o Absolute Maximum Ratings(TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (pulse) Base Current Total Power Dissipation Junction Temperature Storage Temperature VCBO VCES VCEO VEBO IC IC IB PD TJ TSTG o C) Rating -20 -20 -10 -6 -2 -5 -2 750 +150 -55 to +150 Unit V V V V A A A mW o o Symbol .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) .050 Typ (1.27) 3 2 1 .050 o o 5 Typ...
2SA1300
manufacturer
SeCoS
PNP Transistor
2SA1300 Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free -2 A, -20 V PNP Plastic Encapsulated Transistor FEATURES   TO-92 High DC Current gain and excellent hFE linearity Low Saturation Voltage G H CLASSIFICATION OF hFE(1) Product-Rank Range 2SA1300-Y 140~280 2SA1300-GR 200~400 2SA1300-BL 300~600 K J A B D Emitter Collector Base REF. A B C D E F G H J K E C F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector   Base  Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Volt...
2SA1300
manufacturer
LZG
SILION PNP TRANSISTOR
2SA1300(3CG1300) PNP /SILION PNP TRANSISTOR :,。 Purpose: Strobo flash, medium power amplifier applications. :,,。 Features: High DC current gain, excellent hFE linearity, low saturation voltage. /Absolute maximum ratings(Ta=25℃) Symbol Rating Unit VCBO -20 V VCEO -10 V VEBO -6.0 V IC -2.0 A ICP -5.0 A IB -2.0 A PC 750 mW Tj 150 ℃ Tstg -55~150 ℃ /Electrical characteristics(Ta=25℃) Symbol Test condition VCEO VEBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob IC=-10mA IB=0 IE=-1.0mA IC=0 VCB=-20V IE=0 VEB=-6.0V IC=0 VCE=-1.0V IC=-0.5A VCE=-1.0V IC=-4.0A IC=-2.0A IB=-50mA IC=-2.0A VCE=-1.0V VCE=-1.0V IC=-0.5A VCB=-10V f=1.0MHz IE=0 Min -10 -6...
2SA1301
manufacturer
Toshiba
Silicon PNP Transistor
: SILICON PNP TRIPLE DIFFUSED TYPE POWER AMPLIFIER APPLICATIONS. FEATURES . Complementary to 2SC3280 . Recommend for 80W High Fidelity Audio Frequency Amplifier Output Stage. 2SA1301 Unit in mm 20.5MAX. 0Z.3±&2 | E MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VcBO VcEO Vebo ic IB PC T.1 T stg RATING -160 -160 -5 -12 -1.2 UNIT V V V A A 120 W 150 -55-150 °C °C 5.45±Q15 lOO C5 CS +1 \\i X
2SA1301
manufacturer
SavantIC
SILICON POWER TRANSISTOR
·With TO-3PL package ·Complement to type 2SC3280 APPLICATIONS ·Power amplifier applications ·Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25 Open emitter Open base Open collector CONDITIONS VALUE -160 -160 -5 -12 -1.2 120 150 -55~150 UNIT V V V A A W SavantIC Semiconductor www.DataSheet4U....
2SA1301
manufacturer
Inchange Semiconductor
Silicon PNP Power Transistor
·High Power Dissipation ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Complement to Type 2SC3280 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Recommend for 80W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -12 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -1.2 A 120 W 150 ℃ Tstg Storage Temperature Ra...




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