| Part Number | 2SA1302 |
| Manufacturer | Toshiba (https://www.toshiba.com/) |
| Title | 2SA1302-0 |
| Description | TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Amplifier Applications Features • Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHAR... |
| Features |
• Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range VCBO -200 V VCEO -200 V VEBO -5 V IC -15 A IB -1.5 A PC 150 W Tj 150 °C Tstg -55 ~ 150 °C Electrical Characteristics (Ta = 25°C) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Emitter Cut-off Current Co... |
| Document |
 2SA1302 datasheet pdf (324.07KB)
|
| Distributor |
Quest Components All other distributors |
| Stock | 350 In Stock |
| Price | 161 units: 2.88 USD 57 units: 3.12 USD 1 units: 7.2 USD
|
| BuyNow |
 Buy Now (Manufacturer a Toshiba America Electronic Components 2SA1302-0) |
| Part Number | 2SA1302 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLI. |
| Features |
NDITIONS MIN
2SA1302
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdown Voltage
IC= -50mA ; IB= 0
-200
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -10A; IB= -1A
-3.0
V
VBE(on)
Base-Emitter On Voltage
IC= -8A ; VCE= -5V
-1.5
V
ICBO
Collector Cutoff Current
VCB= -200V ; I. |
| Document | 2SA1302 datasheet pdf |
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