Part Number 2SA1302
Manufacturer Toshiba (https://www.toshiba.com/)
Title Silicon PNP Transistor
Description TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Amplifier Applications Fe...
• Complementary to 2SC3281
• Recommended for 100W High Fidelity Audio Frequency - Amplifier Output Stage Absolute Maximum Ratings (Ta = 25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Diss...

Datasheet 2SA1302 pdf datasheet - 324.07KB


Inchange Semiconductor
Part Number 2SA1302
Manufacturer Inchange Semiconductor
Title Silicon PNP Power Transistor
Description ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -200V(Min) ·Complement to Type 2SC3281 APPLI.
Features NDITIONS MIN 2SA1302 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -200 V VCE(sat) Collector-Emitter Saturation Voltage IC= -10A; IB= -1A -3.0 V VBE(on) Base-Emitter On Voltage IC= -8A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -200V ; I.

Datasheet 2SA1302 pdf datasheet

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