2SD1782 GME Medium Power Transistor Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

2SD1782

GME
2SD1782
2SD1782 2SD1782
zoom Click to view a larger image
Part Number 2SD1782
Manufacturer GME
Description Medium Power Transistor FEATURES z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K. Pb Lead-free APPLICATIONS z Epitaxial planar type NPN s...
Features z Low VCE(sat). VCE(sat) =0.2V(Typ.) (IC / IB=0.5 A / 50mA) z High VCEO, VCEO=80V z Complements the 2SB1198K. Pb Lead-free APPLICATIONS z Epitaxial planar type NPN silicon transistor. Production specification 2SD1782 SOT-23 ORDERING INFORMATION Type No. Marking 2SD1782 AJ Package Code SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 80 Units V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5V IC Collector Current -Continuous 0.5 mA PC Collector Dissipation 0.2 mW Tj,Tstg Junction and Storage...

Document Datasheet 2SD1782 Data Sheet
PDF 186.69KB

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SD1780
NEC
NPN SILICON TRANSISTOR Datasheet
2 2SD1781
SeCoS
NPN Silicon Transistor Datasheet
3 2SD1781K
Rohm
Medium Power Transistor Datasheet
4 2SD1781K
WEJ
NPN EPITAXIAL SILICON TRANSISTOR Datasheet
5 2SD1781K
SeCoS
NPN Silicon Transistor Datasheet
6 2SD1781K
Kexin
Medium Power Transistor Datasheet
More datasheet from GME
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad