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| Part Number | 2SD1781K |
| Distributor | Stock | Price | Buy |
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| Part Number | 2SD1781K |
| Manufacturer | WEJ |
| Title | NPN EPITAXIAL SILICON TRANSISTOR |
| Description | RoHS 2SD1781K SOT-23-3L 2SD1781K TRANSISTOR (NPN) DFEATURES Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ t. |
| Features | Power dissipation TPCM: .,LCollector current 200 mW (Tamb=25℃) 1. 9 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 ICM℃ 0.8 A OCollector-base voltage V(BR)CBO: 40 V COperating and storage junction temperature range TJ Tstg: -55℃ to +150℃ 1. BASE 2. EMITTER 3. COLLECTOR 2. 80¡ À0. 05 1. 60¡ À0. 05 ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) NParameter Collector-bas. |
| Part Number | 2SD1781K |
| Manufacturer | Rohm |
| Title | Medium Power Transistor |
| Description | 2SD1781K Medium Power Transistor (32V, 800mA) Parameter VCEO IC Value 32V 800mA lFeatures 1)Very low VCE(sat). VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. lOutline SMT3 2SD1781K SOT-346 lInner circuit Dat. |
| Features | 1)Very low VCE(sat). VCE(sat)=0.1V(Typ.) (IC/IB=500mA/50mA) 2)Higt current capacity in compact package. 3)Complements the 2SB1197K. lOutline SMT3 2SD1781K SOT-346 lInner circuit Datasheet lApplication POWER AMPLIFIER lPackaging specifications Part No. Package 2SD1781K SMT3 Package size 2928 Taping code Reel size Tape width (mm) (mm) B. |
| Part Number | 2SD1781K |
| Manufacturer | SeCoS |
| Title | NPN Silicon Transistor |
| Description | Elektronische Bauelemente 2SD1781K NPN Silicon Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K Collector 3 2 Base MARKING AF = hFE ranki. |
| Features | Very low VCE(sat).VCE(sat) < 0.4 V (Typ.) (IC /IB = 500mA / 50mA) Complements to 2SB1197K Collector 3 2 Base MARKING AF = hFE ranking 1 Emitter SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.80 3.00 2.25 2.55 1.20 1.40 0.90 1.15 1.80 2.00 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.55 REF. 0.08 0.15 0.5 REF. 0.95 TYP. ABSOLU. |
| Part Number | 2SD1781K |
| Manufacturer | Kexin |
| Title | Medium Power Transistor |
| Description | SMD Type TransistIoCrs Medium Power Transistor 2SD1781K Features Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA High current capacity in compact package. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01. |
| Features | Very Low VCE(sat).VCE(sat) = -0.1V(Typ.) IC / IB= 500mA / 50mA High current capacity in compact package. +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 +0.10.97 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current * . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SD1781 |
SeCoS |
NPN Silicon Transistor |
|
| 2 | 2SD1781KFRA |
ROHM |
Medium Power Transistor |
|
| 3 | 2SD1781KR |
AiT Components |
GENERAL PURPOSE TRANSISTORS |
|
| 4 | 2SD1780 |
NEC |
NPN SILICON TRANSISTOR |
|
| 5 | 2SD1782 |
Unisonic Technologies |
NPN SILICON TRANSISTOR |
|
| 6 | 2SD1782 |
GME |
Medium Power Transistor |
|
| 7 | 2SD1782 |
JCET |
NPN Transistor |
|
| 8 | 2SD1782K |
Rohm |
Power Transistor |
|
| 9 | 2SD1782K |
Kexin |
Power Transistor |
|
| 10 | 2SD1783 |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
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