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IRF830A |
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| Part Number | IRF830A |
| Manufacturer | nELL |
| Description | The Nell IRF830 are N-Channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand a specified level of energy in the breakdown avalanch... |
| Features |
RDS(ON) = 1.5Ω @ VGS = 10V
Ultra low gate charge(38nC Max.)
Low reverse transfer capacitance (CRSS = 68pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (IRF830A)
D (Drain)
G (Gate)
S (Source)
PRODUCT... |
| Document |
 IRF830A Data Sheet
PDF 317.02KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF830 |
NXP |
PowerMOS transistor |
|
| 2 | IRF830 |
STMicroelectronics |
N-Channel Power MOSFET |
|
| 3 | IRF830 |
TRSYS |
N-CHANNEL ENHANCEMENT MODE MOSFET |
|
| 4 | IRF830 |
Intersil Corporation |
N-Channel Power MOSFET |
|
| 5 | IRF830 |
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
| 6 | IRF830 |
International Rectifier |
Power MOSFET |
|
Desde 2024. D4U Semiconductor.
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