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EMB20N03VAA |
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| Part Number | EMB20N03VAA |
| Manufacturer | Excelliance MOS |
| Description | EMB20N03VAA N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 20mΩ ID 7A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free... |
| Features |
2013/08/15 p.1
EMB20N03VAA
ELECTRICAL CHARACTERISTICS (TA = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V
VGS = 10V, ID = 7A VGS = 4.5V, ID = 3A VDS = 5V, ID = 7A
DY... |
| Document |
 EMB20N03VAA Data Sheet
PDF 181.39KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | EMB20N03VAT |
Excelliance MOS |
MOSFET |
|
| 2 | EMB20N03V |
Excelliance MOS |
N-Channel MOSFET |
|
| 3 | EMB20N03VL |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 4 | EMB20N03A |
Excelliance MOS |
MOSFET |
|
| 5 | EMB20N03G |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
| 6 | EMB20N03Q |
Excelliance MOS |
N-Channel Logic Level Enhancement Mode Field Effect Transistor |
|
Desde 2024. D4U Semiconductor.
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