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EMB09N03HR |
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| Part Number | EMB09N03HR |
| Manufacturer | Excelliance MOS |
| Description | N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 9.5mΩ ID 50A G UIS, Rg 100% Tested S Pb‐Free Lead Plating & Halogen Free EMB09N03H... |
| Features |
2 pad of 2 oz copper.
UNIT V A
mJ W °C
UNIT °C / W
2012/3/26 p.1
EMB09N03HR
ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current
On‐State Drain Current1 Drain‐Source On‐State Resistance1
Forward Transconductance1
V(BR)DSS VGS(th) IGSS IDSS
ID(ON) RDS(ON)
gfs
VGS = 0V, ID = 250A VDS = VGS, ID = 250A VDS = 0V, VGS = ±20V VDS = 24V, VGS = 0V VDS = 20V, VGS = 0V, TJ = 125 °C VDS = 10V, VGS = 10V VGS = 10V,... |
| Document |
 EMB09N03HR Data Sheet
PDF 223.57KB |
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Desde 2024. D4U Semiconductor.
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