FDMC86261P |
Part Number | FDMC86261P |
Manufacturer | Fairchild Semiconductor |
Description | This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized ... |
Features |
Max rDS(on) = 160 mΩ at VGS = -10 V, ID = -2.4 A Max rDS(on) = 185 mΩ at VGS = -6 V, ID = -2.2 A Very low RDS-on mid voltage P channel silicon technology
optimised for low Qg
This product is optimised for fast switching applications as well as load switch applications
100% UIL Tested RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance.
Applications
Active Clamp Swi... |
Document |
FDMC86261P Data Sheet
PDF 336.78KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | FDMC86260 |
ON Semiconductor |
N-Channel MOSFET | |
2 | FDMC86260 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET | |
3 | FDMC86260ET150 |
Fairchild Semiconductor |
MOSFET | |
4 | FDMC86260ET150 |
ON Semiconductor |
N-Channel MOSFET | |
5 | FDMC86262P |
ON Semiconductor |
P-Channel MOSFET | |
6 | FDMC86265P |
Fairchild Semiconductor |
MOSFET |