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FDMC86262P |
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| Part Number | FDMC86262P |
| Manufacturer | ON Semiconductor (https://www.onsemi.com/) |
| Description | This P−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH technology. This very high density process is especially tailored to minimize on−state resistance and optimized for superior switching performance. Features • Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A • Max rDS(on) = 356 mW at VGS = −6 V, ID = −1.8 A • Very Low rDS(on) Mid Voltage P−C. |
| Features |
• Max rDS(on) = 307 mW at VGS = −10 V, ID = −2 A • Max rDS(on) = 356 mW at VGS = −6 V, ID = −1.8 A • Very Low rDS(on) Mid Voltage P−Channel Silicon Technology Optimised for Low Qg • Optimised for Fast Switching Applications as Well as Load Switch Applications • 100% UIL Tested • This Device is Pb−Free, Halide Free and is ROHS Compliant Applications • Active Clamp Switch • Load Switch DATA SHEET www.onsemi.com VDS −150 V rDS(on) MAX 307 mW @ −10 V 356 mW @ −6 V ID MAX −2 A Pin 1 SSSG D D DD Top Bottom WDFN8 3.3x3.3, 0.65P (MLP 3.3x3.3) CASE 511DH MARKING DIAGRAM FDMC 86262P &Z&K&2 F. |
| Datasheet |
 FDMC86262P Data Sheet
PDF 190.46KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | FDMC86260 |
ON Semiconductor |
N-Channel MOSFET |
|
| 2 | FDMC86260 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 3 | FDMC86260ET150 |
Fairchild Semiconductor |
MOSFET |
|
| 4 | FDMC86260ET150 |
ON Semiconductor |
N-Channel MOSFET |
|
| 5 | FDMC86261P |
Fairchild Semiconductor |
MOSFET |
|
| 6 | FDMC86265P |
Fairchild Semiconductor |
MOSFET |
|
| 7 | FDMC86265P |
ON Semiconductor |
P-Channel MOSFET |
|
| 8 | FDMC8622 |
Fairchild Semiconductor |
N-Channel Power Trench MOSFET |
|
| 9 | FDMC8622 |
ON Semiconductor |
N-Channel MOSFET |
|
| 10 | FDMC86240 |
Fairchild Semiconductor |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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