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3DD13003N3 |
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| Part Number | 3DD13003N3 |
| Manufacturer | JCET |
| Description | JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13003N3 TRANSISTOR (NPN) TO-126 FEATURES z Power switching applications z Good high temperature z Low sa... |
| Features |
z Power switching applications z Good high temperature z Low saturation voltage z High speed switching
1. BASE 2. COLLECTOR 3. EMITTER
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature
Value 700 400
9 1.5 1.25 100 150 -55~+150
Unit V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol
Test condi... |
| Document |
 3DD13003N3 Data Sheet
PDF 531.29KB |
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