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IPI076N12N3G |
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| Part Number | IPI076N12N3G |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification 120 V 7.6 mW 100 A Type IPI076N12N3 G IPP076N12N3 G Package Marking PG-TO262-3 076N12N PG-TO220-3 076N12N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T... |
| Document |
 IPI076N12N3G Data Sheet
PDF 487.17KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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