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| Part Number | IPI076N12N3 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | IPI076N12N3 |
| Manufacturer | Infineon |
| Title | Power-Transistor |
| Description | IPI076N12N3 G IPP076N12N3 G OptiMOSTM3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS complian. |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on)max ID 120 V 7.6 mW 100 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification Type IPI076N12N3 G IPP0. |
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|---|---|---|---|---|
| 1 | IPI076N12N3G |
Infineon |
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| 2 | IPI076N15N5 |
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| 3 | IPI076N15N5 |
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| 4 | IPI070N08N3 |
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| 5 | IPI070N08N3G |
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| 6 | IPI070N08N3G |
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| 7 | IPI072N10N3 |
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| 8 | IPI072N10N3 |
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| 9 | IPI072N10N3G |
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| 10 | IPI075N15N3 |
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Desde 2024. D4U Semiconductor.
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