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PTVA101K02EV |
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| Part Number | PTVA101K02EV |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flang... |
| Features |
include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA101K02EV Package H-36275-4
Gain (dB) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C
ƒ = 1030 MHz
26
128µs, 10%
22 128µs, 1%
MODE-S
18
60 50 40
14
Gain
10
30 20
6 10
Efficiency
2
a101k02ev_1-1
0
30 35 40 45 50 55 60 65
Pout (dBm)
Features
• Broadband input matching • High gain and efficiency • Integrated ESD protection • Human Body Model ... |
| Document |
 PTVA101K02EV Data Sheet
PDF 423.74KB |
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Desde 2024. D4U Semiconductor.
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