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| Part Number | PTVA120501EA |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | PTVA120501EA |
| Manufacturer | Infineon |
| Title | Thermally-Enhanced High Power RF LDMOS FET |
| Description | The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performa. |
| Features | include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA120501EA Package H-36265-2 POUT (dBm) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V, IDQ = 50 mA, TCASE = 25°C, 300 µs pulse width, 10% duty cycle 60 55 50 45 40 35 30 18 70 Effic. |
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Desde 2024. D4U Semiconductor.
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