2N3714 Inchange Semiconductor Silicon NPN Power Transistor Datasheet. existencias, precio

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2N3714

Inchange Semiconductor
2N3714
2N3714 2N3714
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Part Number 2N3714
Manufacturer Inchange Semiconductor
Description ·Excellent Safe Operating Area ·Low Collector-Emitter Saturation Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS ·Desi...
Features Voltage IC=200mA; IB= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC=5A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 2V hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V fT Current Gain-Bandwidth Product *:Pulse test:Pulse width=300us,duty cycle≤2% IC= 0.5A; VCE= 10V; f= 1.0MHz 2N3714 MIN MAX UNIT 80 V 5 mA 1.0 V 2.0 V 1.5 V 25 90 15 4 MHz NOTICE: ISC reserves the rights to make changes of the content herein the datash...

Document Datasheet 2N3714 Data Sheet
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