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2N3172 |
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| Part Number | 2N3172 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable... |
| Features |
CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -0.14A
ICEO
Collector Cutoff Current
VCE= -60V; IB=0
IEBO
Emitter Cutoff Current
VEB= -10V; IC=0
hFE
DC Current Gain
IC= -1A ; VCE= -3V
2N3172
MIN MAX UNIT
-0.75 V
-1.8
V
-0.1 mA
-0.1 mA
12
36
Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for ... |
| Document |
 2N3172 Data Sheet
PDF 173.21KB |
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Desde 2024. D4U Semiconductor.
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