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| Distributor | Stock | Price | Buy |
|---|
2N3173 |
| Part Number | 2N3173 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon PNP Power Transistor |
| Description | ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= -0.75V(Max)@ IC = -1A ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·All semelab hermetically sealed products,can be processed in accordance wi. |
| Features | CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.14A VBE(sat) Base-Emitter Saturation Voltage IC= -1A; IB= -0.14A ICEO Collector Cutoff Current VCE= -80V; IB=0 IEBO Emitter Cutoff Current VEB= -10V; IC=0 hFE DC Current Gain IC= -1A ; VCE= -3V 2N3173 MIN MAX UNIT -0.75 V -1.8 V -0.1 mA -. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N3171 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 2 | 2N3171 |
Seme LAB |
Bipolar PNP Device |
|
| 3 | 2N3171H |
INCHANGE |
PNP Transistor |
|
| 4 | 2N3172 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 5 | 2N3174 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2N3174 |
Seme LAB |
Bipolar PNP Device |
|
| 7 | 2N3175 |
SSDI |
PNP Transistor |
|
| 8 | 2N3176 |
SSDI |
PNP Transistor |
|
| 9 | 2N3177 |
SSDI |
PNP Transistor |
|
| 10 | 2N3178 |
SSDI |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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