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GM72V66841CLT |
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| Part Number | GM72V66841CLT |
| Manufacturer | LG Semicon |
| Description | The GM72V66841CT/CLT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positi... |
| Features |
* PC100,PC66 Compatible 7K(2-2-2), 7J(3-2-2), 10K(PC66)
* 3.3V single Power supply * LVTTL interface * Max Clock frequency
100/125 MHz * 4,096 refresh cycle per 64 ms * Two kinds of refresh operation
Auto refresh/ Self refresh * Programmable burst access capability ;
- Sequence:Sequential / Interleave - Length :1/2/4/8/FP * Programmable CAS latency : 2/3 * 4 Banks can operate independently or simultaneously * Burst read/burst write or burst read/single write operation capability * Input and output masking by DQM input * One Clock of back to back read or write command interval ... |
| Document |
 GM72V66841CLT Data Sheet
PDF 565.43KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | GM72V66841CT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 2 | GM72V66841ELT |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM |
|
| 3 | GM72V66841ELT |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 4 | GM72V66841ET |
Hynix Semiconductor |
2M x 8-Bit x 4 Bank SDRAM |
|
| 5 | GM72V66841ET |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
| 6 | GM72V66841Exx |
LG Semicon |
2M x 8-Bit x 4 Bank SDRAM |
|
Desde 2024. D4U Semiconductor.
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