GM72V66841Exx SDRAM Datasheet, Distribuidor, stock y mejor precio

GM72V66841Exx

Part Number	GM72V66841Exx
Manufacturer	Hynix Semiconductor
Title	2M x 8-Bit x 4 Bank SDRAM
Description	The GM72V66841ET/ELT is a synchronous dynamic random access memory comprised of 67,108,864 memory cells and logic including input and output circuits operating synchronously by referring to the positive edge of the externally provided Clock. The GM72V66841ET/ELT provides four banks of 2,097,152 word.
Features	* PC133/PC100/PC66 Compatible -7(143MHz)/-75(133MHz)/-8(125MHz) -7K(PC100,2-2-2)/-7J(PC100,3-2-2) * 3.3V single Power supply * LVTTL interface * Max Clock frequency 143/133/125/100MHz * 4,096 refresh cycle per 64 ms * Two kinds of refresh operation Auto refresh / Self refresh * Programmable burst access capability ; - Sequence:Sequential / Interleave - Length :1/2/4/8/FP * Programmable CAS latency.

No.	Parte #	Fabricante	Descripción
1	GM72V66841ELT	Hynix Semiconductor	2M x 8-Bit x 4 Bank SDRAM
2	GM72V66841ELT	LG Semicon	2M x 8-Bit x 4 Bank SDRAM
3	GM72V66841ET	Hynix Semiconductor	2M x 8-Bit x 4 Bank SDRAM
4	GM72V66841ET	LG Semicon	2M x 8-Bit x 4 Bank SDRAM
5	GM72V66841CLT	LG Semicon	2M x 8-Bit x 4 Bank SDRAM
6	GM72V66841CT	LG Semicon	2M x 8-Bit x 4 Bank SDRAM
7	GM72V661641D	LG Semicon	1M word x 16-Bit x 4 Bank SDRAM
8	GM72V661641DI	LG Semicon	1M word x 16-Bit x 4 Bank SDRAM
9	GM72V661641DI	LG Semicon	1M word x 16-Bit x 4 Bank SDRAM
10	GM72V661641DLI	LG Semicon	1M word x 16-Bit x 4 Bank SDRAM