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2SB1152 |
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| Part Number | 2SB1152 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APP... |
| Features |
n) Base -Emitter On Voltage
IC= -8A; VCE= -5V
ICBO
Collector Cutoff Current
VCB= -160V ; IE=0
IEBO
Emitter Cutoff Current
VEB= -3V; IC=0
hFE-1
DC Current Gain
IC= -20mA; VCE= -5V
hFE-2
DC Current Gain
IC= -1A; VCE= -5V
hFE-3
DC Current Gain
IC= -8A; VCE= -5V
hFE-2Classifications Q S P 60-120 80-160 100-200 2SB1152 MIN TYP. MAX UNIT -2.0 V -1.8 V -50 μA -50 μA 20 60 200 20 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the app... |
| Document |
 2SB1152 Data Sheet
PDF 218.89KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB1150 |
NEC |
PNP Transistor |
|
| 2 | 2SB1151 |
SeCoS |
PNP Transistor |
|
| 3 | 2SB1151 |
NEC |
PNP Silicon Transistor |
|
| 4 | 2SB1151 |
UTC |
PNP SILICON TRANSISTOR |
|
| 5 | 2SB1151 |
INCHANGE |
TO-252 PNP Transistor |
|
| 6 | 2SB1151 |
INCHANGE |
TO-126 PNP Transistor |
|
| 7 | 2SB1151 |
Savantic |
Silicon PNP Power Transistors |
|
| 8 | 2SB1153 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 9 | 2SB1154 |
Panasonic Semiconductor |
PNP Transistor |
|
| 10 | 2SB1154 |
SavantIC |
SILICON POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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