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ICE60N160B |
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| Part Number | ICE60N160B |
| Manufacturer | Micross Components |
| Description | TO-263 G Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energ... |
| Features |
r Low DS(on)
Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems
Product Summary
ID V(BR)DSS rDS(ON)
Qg
TA = 25°C ID = 250uA VGS = 10V VDS = 480V
23.8A 650V 0.14Ω 85nC
Pin Description:
TO-263
G
Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified
Symbol Parameter
Value
Unit Conditions
ID
ID, pulse EAS IAR
dv/dt
Continous Drain Current
Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current,... |
| Document |
 ICE60N160B Data Sheet
PDF 719.99KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ICE60N160B |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 2 | ICE60N130 |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 3 | ICE60N130 |
Micross Components |
N-Channel MOSFET |
|
| 4 | ICE60N130FP |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 5 | ICE60N130FP |
Micross Components |
N-Channel MOSFET |
|
| 6 | ICE60N150 |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
Desde 2024. D4U Semiconductor.
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