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| Part Number | ICE60N130 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | ICE60N130 |
| Manufacturer | Micross Components |
| Title | N-Channel MOSFET |
| Description | TO-220 G Max Min Typ Typ D S Symbol Parameter Value Unit Conditions ID ID, pulse EAS IAR dv/dt Continous Drain Current Pulsed Drain Current Avalanche Energy, Single Pulse Avalanche Current, Repetitive MOSFET dv/dt Ruggedness VGS Ptot Tj, Tstg Gate Source Voltage Power Dissipation Operatin. |
| Features | r Low DS(on) Ultra Low Gate Charge High dv/dt Capability High Unclamped Inductive Switching (UIS) Capability High Peak Current Capability Increased Transconductance Performance Optimized Design For High Performance Power Systems Maximum Ratings @ Tj = 25°C, Unless Otherwise Specified Product Summary ID V(BR)DSS rDS(ON) Qg TA = 25°C ID = 250uA VGS = 10V VDS = 480V 23A 650V 0.13Ω 82. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | ICE60N130FP |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 2 | ICE60N130FP |
Micross Components |
N-Channel MOSFET |
|
| 3 | ICE60N150 |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 4 | ICE60N150 |
Micross Components |
N-Channel MOSFET |
|
| 5 | ICE60N150FP |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 6 | ICE60N150FP |
Micross Components |
N-Channel MOSFET |
|
| 7 | ICE60N160B |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 8 | ICE60N160B |
Micross Components |
N-Channel MOSFET |
|
| 9 | ICE60N600D |
Icemos |
N-Channel Enhancement Mode MOSFET |
|
| 10 | ICE60N600D |
Micross Components |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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