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6N60 |
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| Part Number | 6N60 |
| Manufacturer | INCHANGE |
| Description | INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resist... |
| Features |
·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 6A IDM Drain Current-Single Plused 24 A PD Total Dissipation @TC=25℃ 125 W Tj Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55... |
| Document |
 6N60 Data Sheet
PDF 149.56KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 6N60 |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
| 2 | 6N60 |
UTC |
600V N-CHANNEL POWER MOSFET |
|
| 3 | 6N60 |
nELL |
N-Channel Power MOSFET |
|
| 4 | 6N60 |
ART CHIP |
N-CHANNEL MOSFET |
|
| 5 | 6N60-C |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 6 | 6N60-CBS |
UTC |
N-CHANNEL MOSFET |
|
| 7 | 6N60-P |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 8 | 6N60A |
nELL |
N-Channel Power MOSFET |
|
| 9 | 6N60AF |
nELL |
N-Channel Power MOSFET |
|
| 10 | 6N60B |
CHONGQING PINGYANG |
N-CHANNEL MOSFET |
|
Desde 2024. D4U Semiconductor.
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