| Description | INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification 6N60 ·FEATURES ·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·... |
| Features |
·Drain Current –ID= 6A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Cont... |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET |
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UTC |
N-CHANNEL MOSFET |
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Unisonic Technologies |
N-CHANNEL POWER MOSFET |
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nELL |
N-Channel Power MOSFET |
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nELL |
N-Channel Power MOSFET |
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CHONGQING PINGYANG |
N-CHANNEL MOSFET |
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CHONGQING PINGYANG |
N-CHANNEL MOSFET |
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nELL |
N-Channel Power MOSFET |
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nELL |
N-Channel Power MOSFET |
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CHONGQING PINGYANG |
N-CHANNEL MOSFET |
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