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IRF640A |
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| Part Number | IRF640A |
| Manufacturer | Inchange Semiconductor |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-C... |
| Features |
·Low RDS(on) = 0.144Ω(TYP) ·Lower Input Capacitance ·Improved Gate Charge ·Extended Safe Operating Area ·Rugged Gate Oxide Technology DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 200 ±30 V V ID Drain Current-Continuous 18 A IDM Drain Current-Single Pluse 72 A PD Total Dissipation @TC=25℃ 139 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ isc website：www.iscsemi.cn ... |
| Document |
 IRF640A Data Sheet
PDF 63.08KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRF640 |
NXP |
N-channel TrenchMOS transistor |
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| 2 | IRF640 |
STMicroelectronics |
N-Channel MOSFET |
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| 3 | IRF640 |
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Power MOSFET |
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| 4 | IRF640 |
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200V N-Channel MOSFET |
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| 5 | IRF640 |
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| 6 | IRF640 |
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Desde 2024. D4U Semiconductor.
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