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4N35 |
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| Part Number | 4N35 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·General ... |
| Features |
wn Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=1mA
VSD
Diode Forward On-Voltage
IS=4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 350V; VGS= 0
4N35
MIN TYPE MAX UNIT
350
V
2.0
4.0
V
1.4
V
2.0
Ω
±100 nA
10
µA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products a... |
| Document |
 4N35 Data Sheet
PDF 226.14KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | 4N30 |
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| 2 | 4N30 |
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| 4 | 4N30 |
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| 5 | 4N30 |
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| 6 | 4N30M |
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| 7 | 4N30Z |
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| 8 | 4N31 |
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| 9 | 4N31 |
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| 10 | 4N31 |
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|
Desde 2024. D4U Semiconductor.
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