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2SC5900 |
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| Part Number | 2SC5900 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Breakdown Voltage- : VCBO= 1700V (Min) ·High Switching Speed ·High Reliability APPLICATIONS ·Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAME... |
| Features |
ation Voltage IC= 4A; IB= 1A
VBE(sat) Base-Emitter Saturation Voltage
IC= 4A; IB= 1A
ICBO Collector Cutoff Current
VCB= 800V ; IE= 0
ICES Collector Cutoff Current
VCE= 1700V ; RBE= 0
IEBO Emitter Cutoff Current
VEB= 4V ; IC= 0
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
hFE-2
DC Current Gain
IC=4.5A ; VCE= 5V
tstg Storage Time
IC= 3A ;IB1=0.5A; IB2= -1.5A
tf Fall Time
IC= 3A ;IB1=0.5A; IB2= -1.5A
800
10 4
V 3.0 V 1.5 V 10 μA 1.0 mA 10 mA
9 3.0 μs 0.2 μs
isc website：www.iscsemi.cn
2
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| Document |
 2SC5900 Data Sheet
PDF 206.63KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SC5900 |
Sanyo Semicon Device |
NPN TRANSISTOR |
|
| 2 | 2SC5902 |
INCHANGE |
NPN Transistor |
|
| 3 | 2SC5902 |
Panasonic Semiconductor |
NPN Transistor |
|
| 4 | 2SC5904 |
Panasonic Semiconductor |
NPN Transistor |
|
| 5 | 2SC5905 |
Panasonic Semiconductor |
Silicon NPN Transistor |
|
| 6 | 2SC5906 |
Toshiba |
Silicon NPN Transistor |
|
| 7 | 2SC5907 |
Renesas |
Silicon NPN Epitaxial Type Transistor |
|
| 8 | 2SC5909 |
Panasonic Semiconductor |
NPN Transistor |
|
| 9 | 2SC5912 |
Panasonic Semiconductor |
Silicon NPN triple diffusion mesa type Power Transistor |
|
| 10 | 2SC5913 |
Panasonic Semiconductor |
NPN TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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