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2N5401S |
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| Part Number | 2N5401S |
| Manufacturer | KEC |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. FEATURES High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120... |
| Features |
High Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V Low Leakage Current. : ICBO=-50nA(Max.) @VCB=-120V Low Saturation Voltage : VCE(sat)=-0.5V(Max.) @IC=-50mA, IB=-5mA Low Noise : NF=8dB (Max.)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage
VCBO
-160
Collector-Emitter Voltage
VCEO
-150
Emitter-Base Voltage
VEBO
-5
Collector Current
IC -600
Base Current
IB -100
Collector Power Dissipation
PC * 350
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On 99.5% Alumina 10 8 0.6 )
UNIT V V V mA mA mW
... |
| Document |
 2N5401S Data Sheet
PDF 342.79KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2N5401 |
Fairchild Semiconductor |
PNP General Purpose Amplifier |
|
| 2 | 2N5401 |
ON Semiconductor |
Amplifier Transistor |
|
| 3 | 2N5401 |
Motorola |
AMPLIFIER TRANSISTOR |
|
| 4 | 2N5401 |
Multicomp |
Bipolar Transistor |
|
| 5 | 2N5401 |
KEC |
EPITAXIAL PLANAR PNP TRANSISTOR |
|
| 6 | 2N5401 |
Philips |
PNP high-voltage transistors |
|
Desde 2024. D4U Semiconductor.
|