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4N65 |
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| Part Number | 4N65 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Drain Current ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed... |
| Features |
S
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 250µA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID=250µA
VSD
Diode Forward On-Voltage
IS=4.4A ;VGS= 0
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=2.2A
IGSS
Gate-Body Leakage Current
VGS= ±30V;VDS= 0
IDSS
Zero Gate Voltage Drain Current
VDS= 650V; VGS= 0
tr
Rise Time
td(on)
Turn-on Delay Time
tf
Fall Time
td(off)
Turn-off Delay Time
ID=4A; VDD=320V; RL=25Ω
MIN TYPE MAX UNIT
650
V
2.0
4.0
V
1.4
V
2.5
Ω
±100 nA
10
µA
100
35 ns
80
60
NOTICE： ISC reserves the rights to make changes of the content herei... |
| Document |
 4N65 Data Sheet
PDF 229.09KB |
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Desde 2024. D4U Semiconductor.
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