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2SB883 |
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| Part Number | 2SB883 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -7A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -7A ·Complement to Type 2SD1193 ·Minimum Lot-to-L... |
| Features |
wise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -7A, IB= -14mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -7A, IB= -14mA
ICBO
Collector Cutoff Current
VCB= -40V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -7A; VCE= -2V
fT
Current-Gain—Bandwidth Product
IC= -7A; VCE= -5V
2SB883
MIN TYP. MAX UNIT
-60
V
-70
V
-1.5
V
-2.0
V
-100 μA
-3
mA
2000
20
MHz
NOTICE： ISC res... |
| Document |
 2SB883 Data Sheet
PDF 218.09KB |
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Desde 2024. D4U Semiconductor.
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