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2SB882 |
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| Part Number | 2SB882 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High DC Current Gain- : hFE = 2000(Min)@ IC= -5A ·Wide Area of Safe Operation ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = -1.5V(Max)@ IC= -5A ·Complement to Type 2SD1192 ·Minimum Lot-to-L... |
| Features |
AL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -30mA, RBE= ∞
V(BR)CBO Collector-Base Breakdown Voltage
IC= -5mA, IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -5A, IB= -10mA
VBE(sat) Base-Emitter Saturation Voltage
IC= -5A, IB= -10mA
ICBO
Collector Cutoff Current
VCB= -40V, IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE
DC Current Gain
IC= -5A; VCE= -2V
2SB882
MIN TYP. MAX UNIT
-60
V
-70
V
-1.5
V
-2.0
V
-100 μA
-5
mA
2000
NOTICE： ISC reserves the rights to make c... |
| Document |
 2SB882 Data Sheet
PDF 214.04KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SB880 |
Sanyo Semicon Device |
PNP Transistor |
|
| 2 | 2SB880 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | 2SB880 |
INCHANGE |
PNP Transistor |
|
| 4 | 2SB881 |
Sanyo Semicon Device |
PNP Transistor |
|
| 5 | 2SB881 |
Inchange Semiconductor |
Silicon PNP Power Transistor |
|
| 6 | 2SB882 |
Sanyo Semicon Device |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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