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semi one |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -5.3A RDS(ON) < 90m Ω @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM |
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semi one |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -5.1A RDS(ON) < 105mΩ @ VGS=-4.5V RDS(ON) < 55mΩ @ VGS=-10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM applications ●Load switch ●Po |
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semi one |
P-Channel Enhancement Mode Power MOSFET ● VDS = -30V,ID = -5.3A RDS(ON) < 100mΩ @ VGS=-4.5V RDS(ON) < 49mΩ @ VGS=-10V D G S Schematic diagram ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Marking and pin Assignment Application ●PWM |
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semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS =20V,ID =6A RDS(ON) < 28mΩ @ VGS=4.5V RDS(ON) < 38mΩ @ VGS=2.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current Application ● Power switching application ● Hard Switched an |
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Desde 2024. D4U Semiconductor.
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