| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID =9A RDS(ON) < 20mΩ @ VGS=2.5V RDS(ON) < 15mΩ @ VGS=4.5V ESD Rating: 2000V HBM ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Schematic diagram Marking and pin Assignment Applicatio |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment Applicat |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS =80V,ID =130A RDS(ON) <6mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proces |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS =16V,I D =7A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 17 mΩ @ VGS=3.8V RDS(ON) < 21mΩ @ VGS=2.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ●PWM application ●Load switch PE8806 Sc |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 30V,ID =11A RDS(ON) < 10m Ω@ V GS=10V RDS(ON) < 14m Ω@ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Applicati |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID =8A RDS(ON) < 15mΩ @ VGS=4.5V RDS(ON) < 19mΩ @ VGS=2.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Applicatio |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID =12A RDS(ON) < 10mΩ @ VGS=4.5V RDS(ON) < 13mΩ @ VGS=2.5V ● High power and current handing capability ● Lead free product is acquired ● Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin assignment Applicati |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V, ID = 6A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 20mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Application ●Battery protection ●Loa |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V, ID = 6A RDS(ON) < 34mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Application ●Battery protection ●Loa |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V, ID = 6A RDS(ON) < 34mΩ @ VGS=2.5V RDS(ON) < 24mΩ @ VGS=4.5V ● High Power and current handing capability ● Lead free product is acquired ● Surface Mount Package D1 G1 G2 D2 S1 S2 Schematic diagram Marking and pin Assignment Applicat |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS=85V; ID=92A@ VGS=10V; RDS(ON)<7.45mΩ @ VGS=10V ● Special Designed for E-Bike Controller Application ● Ultra Low On-Resistance ● High UIS and UIS 100% Test Application ● 64V E-Bike Controller Applications ● Hard Switched and High Frequency Circu |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS = 20V,ID =10A RDS(ON) =9 mΩ@ VGS=4.5V RDS(ON) =11mΩ@ VGS=4.5V ESD Rating: 2000V HBM ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Schematic diagram Marking and pin assignment Application ● |
|
|
|
|
semi one |
N-Channel Enhancement Mode Power MOSFET ● VDS =80V,ID =110A RDS(ON) <8mΩ @ VGS=10V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special proces |
|
Desde 2024. D4U Semiconductor.
|