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ESD protection and benefits • Allows switching between PCMFxUSB3B/C common mode filters with ESD protection and PESDxUSB3B/C ESD protection in the same footprint • TrEOS protection process for very high system-level ESD robustness: superior protection of sensitive |
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Ultra low capacitance bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Ultra low diode capacitance Cd = 0.25 pF • High reverse standoff voltage VRWM = 24 V • ESD protection up to ±10 kV according to IEC 61000-4-2 3. Applications • NFC antenna protection • Protec |
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ESD protection diode and benefits • Unidirectional ESD protection of one line • Low clamping voltage: VCL = 20 V at IPPM = 18 A • ESD protection > 30 kV • IEC 61000-4-5 (surge); IPPM = 18 A at tp = 8/20 µs 3. Application information • Computers and peripherals • Communi |
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ESD protection and benefits • Reverse stand-off voltage: VRWM = 27 V • Low clamping voltage: VCL = 36 V at IPP = 3 A • ESD protection up to 30 kV (IEC 61000-4-2) • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω) • ISO 7637-3: Pulse a: VS = -150 V / Pu |
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Ultra low capacitance double rail-to-rail ESD protection diode and benefits • ESD protection of two high-speed data lines • Ultra low capacitance: CD = 1.3 pF • ISO 10605 (330 pF, 2 kΩ) up to 15 kV • ESD protection up to 8 kV • AEC-Q101 qualified 3. Applications • 100BASE-T1 / OPEN Allicance BroadR-Reach automo |
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ESD protection and benefits • Allows switching between PCMFxUSB3S common mode filters with ESD protection and PESDxUSB3S ESD protection in the same footprint • TrEOS protection process for very high system-level ESD robustness: superior protection of sensitive Syst |
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ESD protection and benefits • Reverse stand-off voltage: VRWM = 27 V • Low clamping voltage: VCL = 36 V at IPP = 3 A • ESD protection up to 30 kV (IEC 61000-4-2) • ESD protection up to 30 kV (ISO 10605: C = 330 pF, R = 330 Ω) • ISO 7637-3: Pulse a: VS = -150 V / Pu |
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Very low capacitance bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Very low diode capacitance: Cd = 11 pF • Max. peak pulse power: PPPM = 45 W • Low clamping voltage: VCL = 12.5 V • Ultra low leakage current: IRM < 1 nA • ESD protection up to 30 kV • IEC 6100 |
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ESD protection diode and benefits • Unidirectional ESD protection of one line • Low clamping voltage: VCL = 40 V at IPPM = 5 A • ESD protection > 30 kV • IEC 61000-4-5 (surge); IPPM = 5 A at tp = 8/20 µs 3. Application information • Computers and peripherals • Communica |
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Unidirectional ESD protection diode and benefits ESD protection of one line Ultra small SMD plastic package Solderable side pads Package height typ. 0.37 mm Low clamping voltage: VCL = 23 V AEC-Q101 qualified ESD protection up to 30 kV IEC 61000-4-2; level 4 (ESD) IE |
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Low capacitance unidirectional double ESD protection diode and benefits • Unidirectional ESD protection of two lines • Low diode capacitance: Cd = 17 pF • Max. peak pulse power: PPP = 160 W • Low clamping voltage: VCL = 55 V • Ultra low leakage current: IRM ≤ 1 uA • ESD protection up to 30 kV • IEC 61000-4-2 |
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Ultra low clamping bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Ultra small leadless package with a height of 0.3 mm • IEC 61000-4-5 (surge); IPPM = 8.3 A (average measured) • Very low clamping voltage: VCL = 8.9 V max for 7.1 A, 8/20 µs pulse • Ultra low |
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ESD protection diode and benefits • Ultra low diode capacitance Cd = 0.30 pF • High reverse standoff voltage VRWM = 24 V • Ultra low leakage current: IRM = 1 nA • ESD protection up to 10 kV; IEC 61000-4-2 3. Applications • NFC antenna protection • Protection of high-spe |
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Low capacitance bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Max. peak pulse power: PPPM = 200 W • Low clamping voltage: V(CL)R = 70 V • Ultra low leakage current: IRM < 1 nA • ESD protection > 23 kV • IEC 61000-4-2, level 4 (ESD) • IEC 61000-4-5 (surge |
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4-fold ESD protection array and benefits • Unidirectional ESD protection of up to 4 lines • Very high surge robustness; IPP = 14.2 A (average measured) for 8/20 µs pulse • Very low clamping voltage: VCL = 3.7 V typ. for 11 A 8/20 µs pulse • ESD protection up to 25 kV • Very low |
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Very low capacitance bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Very low diode capacitance: Cd = 11 pF • Max. peak pulse power: PPPM = 45 W • Low clamping voltage: VCL = 12.5 V • Ultra low leakage current: IRM < 1 nA • ESD protection up to 30 kV • IEC 6100 |
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Very low capacitance bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Ultra small SMD plastic package • Solderable side pads • Package height typ. 0.37 mm • Very low diode capacitance: Cd = 11 pF • Max. peak pulse power: PPPM = 45 W • Low clamping voltage: VCL = |
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ESD protection and benefits • System-level ESD protection for USB 2.0 and SuperSpeed USB 3.2 at 10 Gbps, HDMI, DisplayPort, eSATA and LVDS • Line capacitance of only 0.3 pF for each channel • Outstanding system protection: extremely deep snap-back combined with dyn |
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Low capacitance bidirectional ESD protection diode and benefits • Bidirectional ESD protection of one line • Max. peak pulse power: PPPM = 200 W • Low clamping voltage: VCL = 44 V • Ultra low leakage current: IRM = 1 nA • ESD protection up to 30 kV • IEC 61000-4-2, level 4 (ESD) • IEC 61000-4-5 (surg |
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Ultra low capacitance ESD protection diode I Unidirectional ESD protection of one line I Ultra low diode capacitance: Cd = 0.6 pF I Max. peak pulse power: PPP up to 200 W I Low clamping voltage I ESD protection > 23 kV I IEC 61000-4-2; level 4 (ESD) I IEC 61000-4-5; (surge) 1.3 Application |
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Desde 2024. D4U Semiconductor.
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