nexperia BAS Hoja de datos

No.	parte #	Fabricante	Descripción
1	BAS40W	nexperia	General-purpose Schottky diodes
2	BAS21W	nexperia	High-voltage switching diodes I High switching speed: trr ≤ 50 ns I Low leakage current I High reverse voltage: VR ≤ 250 V I Low capacitance: Cd ≤ 2 pF I Very small SMD plastic package I AEC-Q101 qualiﬁed 1.3 Applications I High-speed switching I General-purpose switching I Vo
3	BAS116	nexperia	Low-leakage diode and benefits • Plastic SMD package • Low leakage current: typ. 3 pA • Switching time: typ. 0.8 us • Continuous reverse voltage: max. 75 V • Repetitive peak reverse voltage: max. 85 V • Repetitive peak forward current: max. 500 mA. • AEC-Q101 qualifie
4	BAS40-07	nexperia	General-purpose Schottky diodes
5	BAS40-05W	nexperia	General-purpose Schottky diodes
6	BAS32L	nexperia	High-speed switching diode and benefits High switching speed: trr ≤ 4 ns Reverse voltage: VR ≤ 75 V Repetitive peak reverse voltage: VRRM ≤ 100 V Repetitive peak forward current: IFRM ≤ 450 mA Small hermetically sealed glass SMD package 1.3 Applications High-speed
7	BAS116L	nexperia	Low-leakage diode and benefits • Switching time typical: trr = 0.8 µs • Low leakage current typical: IR = 3 pA • Repetitive peak reverse voltage: VRRM ≤ 85 V • Low capacitance typical: Cd = 2 pF • Leadless ultra small SMD plastic package • Low package height of 0.48 m
8	BAS316	nexperia	High-speed switching diode and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages 1.3 Applications  High-speed sw
9	BAS16W	nexperia	High-speed switching diode and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages 1.3 Applications  High-speed sw
10	BAS16VV	nexperia	High-speed switching diode and benefits  High switching speed: trr  4 ns  Low leakage current  Repetitive peak reverse voltage: VRRM  100 V  AEC-Q101 qualified  Low capacitance  Reverse voltage: VR  100 V  Small SMD plastic packages 1.3 Applications  High-speed sw
11	BAS70-05	nexperia	General-purpose dual Schottky diode and benefits • High switching speed • Low leakage current • High breakdown voltage • Low capacitance 3. Applications • Ultra high-speed switching • Voltage clamping 4. Quick reference data Table 1. Quick reference data Symbol Parameter IF forw
12	BAS40-06W	nexperia	General-purpose Schottky diodes
13	BAS40	nexperia	General-purpose Schottky diodes
14	BAS40-07V	nexperia	General-purpose Schottky diodes
15	BAS40H	nexperia	General-purpose Schottky diodes
16	BAS40L	nexperia	General-purpose Schottky diodes
17	BAS40-06	nexperia	General-purpose Schottky diodes and benefits  High switching speed  High breakdown voltage  AEC-Q101 qualified 1.3 Applications  Ultra high-speed switching 1.4 Quick reference data Table 2. Quick reference data Symbol Parameter Per diode IF forward current VF forward voltage VR
18	BAS21VD	nexperia	High-voltage switching diodes and benefits • High switching speed: trr ≤ 50 ns • Low capacitance: Cd ≤ 5 pF • Reverse voltage: VR ≤ 200 V • AEC-Q101 qualified • Repetitive peak reverse voltage: VRRM ≤ 250 V • Repetitive peak forward current: IFRM ≤ 1 A • Small SMD plastic package
19	BAS21LD	nexperia	High-voltage switching diode and benefits • High switching speed: trr ≤ 50 ns • Low leakage current: IR ≤ 100 nA • High reverse voltage VR ≤ 200 V • Low capacitance: Cd ≤ 2 pF • Ultra small and leadless SMD plastic package • Soldarable side pads • Package height typ. 0.37 mm • A
20	BAS19	nexperia	High-voltage switching diode and benefits • High switching speed: trr ≤ 50 ns • Low leakage current • Reverse voltage VR ≤ 100 V • Low capacitance: Cd ≤ 5 pF • Small SMD plastic package • AEC-Q101 qualified 3. Applications • High-speed switching at high voltage • High-voltage g