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natlinear |
600V N-Channel Enhancement Mode MOSFET VDS =600V，ID =5A RDS(ON)(Typ.)=2.0Ω @VGS=10V Fast switching tim Low gate charge Low on-state resistance and have a high rugged avalanche characteristics Excellent package for good heat dissipation Application D G S Marking and pin assignme |
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Desde 2024. D4U Semiconductor.
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