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nELL |
Switchmode Series NPN Silicon Power Transistors VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 µs (Max.) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A) DESCRIPTION T hese devices are designed for high-voltage, high-spee |
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nELL |
Complementary Silicon power transistors Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The MJE3055A is a silicon epitaxial-b |
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nELL |
Complementary Silicon power transistors Designed for general-purpose switching and amplifier applications. DC current gain specified to 10A High current gain-Band width product: fT = 2 MHz (Min.) @ lC = 0.5 Adc Excellent safe operating area DESCRIPTION The MJE3055A is a silicon epitaxial-b |
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Desde 2024. D4U Semiconductor.
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