| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
Fairchild Semiconductor |
N-Channel Power MOSFET |
|
|
|
|
Fairchild |
Hyperfast Diode • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <65ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated |
|
|
|
|
Fairchild Semiconductor |
150V N-Channel PowerTrench MOSFET |
|
|
|
|
Fairchild |
4 /194 /304-Bit 512K x 8 High Performance CMOS EPROM s High performance CMOS — 120, 150ns access time* s Simplified upgrade path —VPP is a “Don’t Care” during normal read operation s Manufacturer’s identification code s JEDEC standard pin configuration — 32-pin PDIP — 32-pin PLCC — 32-pin CERDIP *Note |
|
|
|
|
Fairchild Semiconductor |
1200 V Motion SPM 2 Series • UL Certified No. E209204 (UL1557) • 1200 V - 25 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes |
|
|
|
|
Fairchild Semiconductor |
1200 V Motion SPM 2 Series • UL Certified No. E209204 (UL1557) • 1200 V - 35 A 3-Phase IGBT Inverter, Including Control ICs for Gate Drive and Protections • Low-Loss, Short-Circuit-Rated IGBTs • Very Low Thermal Resistance Using Al2O3 DBC Substrate • Built-In Bootstrap Diodes |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET Dual CoolTM Top Side Cooling PQFN package Max rDS(on) = 2.0 mΩ at VGS = 10 V, ID = 27 A Max rDS(on) = 2.95 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFET Schottky Body Diode RoHS Compliant Gene |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 1.4 A, 150 V. • • • • RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V Applications • DC/DC converter High performance trench technology for extremely low RDS(ON) Low gate charge (8nC typ) High power and current handling capability Fast |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 3.0 A, 80 V RDS(ON) = 77 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6 V Applications • DC/DC converter • High performance trench technology for extremely low RDS(ON) • Low gate charge (13nC typ) • High power and current handling capability • Fast sw |
|
|
|
|
Fairchild Semiconductor |
20V N-Channel PowerTrench MOSFET • 36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 31 mΩ @ VGS = 2.5 V • Low gate charge (12 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor drives D D G S I-PAK |
|
|
|
|
Fairchild Semiconductor |
75A/ 1200V Hyperfast Diode • Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <85ns • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175oC • Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1200V • Avalanche Energy Rated |
|
|
|
|
Fairchild |
4 /194 /304-Bit (512K x 8) High Performance CMOS EPROM s High performance CMOS — 120, 150ns access time* s Simplified upgrade path —VPP is a “Don’t Care” during normal read operation s Manufacturer’s identification code s JEDEC standard pin configuration — 32-pin PDIP — 32-pin PLCC — 32-pin CERDIP *Note |
|
|
|
|
fairchild |
Low Power MOSFET 512-FDG6304P ♦ 512-FDC6302P ♦ 512-FDG6306P ♦ 512-FDG6308P ♦ 512-FDS9933A ♦ 512-FDC6306P MOUSER STOCK NO. Mfr. Mfr. Part No. Package VDS RDS Qg (on) (V) (mΩ) (nC) SO-8 SOT-223 SOT-23 TSSOP-8 SOT-23 SOT-23 BGA-12 BGA-6 SOT-23 SOT-23 SSOT-6 TO-220 TO- |
|
|
|
|
fairchild |
Low Power MOSFET 512-FDG6304P ♦ 512-FDC6302P ♦ 512-FDG6306P ♦ 512-FDG6308P ♦ 512-FDS9933A ♦ 512-FDC6306P MOUSER STOCK NO. Mfr. Mfr. Part No. Package VDS RDS Qg (on) (V) (mΩ) (nC) SO-8 SOT-223 SOT-23 TSSOP-8 SOT-23 SOT-23 BGA-12 BGA-6 SOT-23 SOT-23 SSOT-6 TO-220 TO- |
|
|
|
|
fairchild |
Low Power MOSFET 512-FDG6304P ♦ 512-FDC6302P ♦ 512-FDG6306P ♦ 512-FDG6308P ♦ 512-FDS9933A ♦ 512-FDC6306P MOUSER STOCK NO. Mfr. Mfr. Part No. Package VDS RDS Qg (on) (V) (mΩ) (nC) SO-8 SOT-223 SOT-23 TSSOP-8 SOT-23 SOT-23 BGA-12 BGA-6 SOT-23 SOT-23 SSOT-6 TO-220 TO- |
|
|
|
|
Fairchild Semiconductor |
N-Channel MOSFET • 4.0 A, 80 V RDS(ON) = 70 mΩ @ VGS = 10 V RDS(ON) = 80 mΩ @ VGS = 6 V • Low gate charge (13nC Typical) • Fast switching speed • High performance trench technology for extremely low RDS(ON) • High power and current handling capability D D D D 5 |
|
|
|
|
Fairchild Semiconductor |
20V N-Channel MOSFET • 36 A, 20 V RDS(ON) = 21 mΩ @ VGS = 4.5 V RDS(ON) = 31 mΩ @ VGS = 2.5 V • Low gate charge (12 nC typical) • Fast switching • High performance trench technology for extremely low RDS(ON) Applications • DC/DC converter • Motor drives D D G S I-PAK |
|
|
|
|
Fairchild Semiconductor |
150 mA CMOS LDO Regulators • Ultra Low Power Consumption • Enable optimized for CDMA time phases • 150 mV dropout voltage at 150 mA • 25 µA ground current at 150 mA • Enable/Shutdown Control • SOT23-5 package • Thermal limiting • 300 mA peak current Applications • Cellular Ph |
|
|
|
|
Fairchild |
13mm (0.512 inch) One Digit NUMERIC FRAME DISPLAY •Bright Bold Segments •Common Anode/Cathode •Low Power Consumption •Low Current Capability •Neutral Segments •Grey Face •Epoxy Encapsulated Frame •High Performance •High Reliability APPLICATIONS •Appliances NOTES: •Dimensions are in mm (inches) •Tol |
|
|
|
|
Fairchild |
13mm (0.512 inch) One Digit NUMERIC FRAME DISPLAY •Bright Bold Segments •Common Anode/Cathode •Low Power Consumption •Low Current Capability •Neutral Segments •Grey Face •Epoxy Encapsulated Frame •High Performance •High Reliability APPLICATIONS •Appliances NOTES: •Dimensions are in mm (inches) •Tol |
|
Desde 2024. D4U Semiconductor.
|