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eupec |
IGBT r Emitter Sättigungsspannung collector emitter saturation voltage IC= 300A, VGE= 15V, Tvj= 25°C IC= 300A, VGE= 15V, Tvj= 125°C Gate Schwellenspannung gate threshold voltage IC= 12mA, VCE= VGE, Tvj= 25°C Gateladung gate charge VGE = -15V...+15V |
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Desde 2024. D4U Semiconductor.
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