| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES ly, and Hidden Refresh D Serial Presence-Detect (SPD) Using EEPROM D Ambient Temperature Range 0°C to 70°C D Gold-Plated Contacts description The TM2EJ64DPN is a 16M-byte, 144-pin, small outline dual-in-line memory module (SODIMM). The SODIMM is com |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use With Socket D High-Speed, Low-Noise LVTTL Interface D Long Refresh Period: 32 ms (2 048 Cycles) D 3-State Output D Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES Presence Detect (SPD) Using EEPROM SYNCHRONOUS CLOCK CYCLE TIME (CtLC=K33)† tCK2 (CL = 2) ’xSN64EPH-10 10 ns † CL = CAS latency 15 ns ACCESS TIME CLOCK TO OUTPUT tAC3 tAC2 (CL = 3) (CL = 2) 7.5 ns 7.5 ns REFRESH INTERVAL 64 ms desc |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES ly, and Hidden Refresh D Serial Presence-Detect (SPD) Using EEPROM D Ambient Temperature Range 0°C to 70°C D Gold-Plated Contacts description The TM2EJ64DPN is a 16M-byte, 144-pin, small outline dual-in-line memory module (SODIMM). The SODIMM is com |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES ly, and Hidden Refresh D Serial Presence-Detect (SPD) Using EEPROM D Ambient Temperature Range 0°C to 70°C D Gold-Plated Contacts description The TM2EJ64DPN is a 16M-byte, 144-pin, small outline dual-in-line memory module (SODIMM). The SODIMM is com |
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ETCTI |
64-Bit SDRAM Modules |
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ETCTI |
64-Bit SDRAM Modules |
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ETCTI |
64-Bit / 72-Bit SDRAM Modules (Rev. B) |
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ETCTI |
64-Bit / 72-Bit SDRAM Modules (Rev. B) |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES urst-Interrupt Operations Burst Length Programmable to 1, 2, 4, and 8 Two Banks for On-Chip Interleaving (Gapless Access) Ambient Temperature Range 0°C to 70°C Gold-Plated Contacts Pipeline Architecture Serial Presence Detect (SPD) Using EEPROM desc |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES Burst-Interrupt Operations Burst Length Programmable to 1, 2, 4, and 8 Two Banks for On-Chip Interleaving (Gapless Access) Ambient Temperature Range 0°C to 70°C Gold-Plated Contacts Pipeline Architecture Serial Presence Detect (SPD) Using EEPROM de |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES Interface Byte-Read/Write Capability Read Latencies 2 and 3 Supported Support Burst-Interleave and Burst-Interrupt Operations Burst Length Programmable to 1, 2, 4, and 8 Two Banks for On-Chip Interleaving (Gapless Access) Ambient Temperature Range 0° |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES g EEPROM SYNCHRONOUS CLOCK CYCLE TIME (CtLC=K33)† tCK2 (CL = 2) ’xSN64EPN-10 10 ns 15 ns ’xSN64EPN-12 12 ns † CL = CAS latency 15 ns ACCESS TIME CLOCK TO OUTPUT tCK3 tCK2 (CL = 3) (CL = 2) 7.5 ns 8 ns 8 ns 9 ns REFRESH INTERVAL |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES g EEPROM ’xSN64EPU-12A‡ SYNCHRONOUS CLOCK CYCLE TIME (CtLC=K33)† tCK2 (CL = 2) 12 ns 15 ns ACCESS TIME CLOCK TO OUTPUT tCK3 tCK2 (CL = 3) (CL = 2) 9 ns 9 ns REFRESH INTERVAL 64 ms ’xSN64EPU-12 12 ns 18 ns 9 ns 10 ns † CL = CAS late |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES ) (CL = 2) ’xSJ64EPU-12A† 12 ns 15 ns 9 ns 9 ns ’xSJ64EPU-12 12 ns 18 ns 9 ns 10 ns † −12A speed device is supported only at −5 to 10% VDD ‡ CL = CAS latency REFRESH INTERVAL 64 ms 64 ms description The TM2SJ64EPU is a 16M-byte, 144-pin sma |
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Texas Instruments |
SYNCHRONOUS DYNAMIC RAM MODULES SS TIME CLOCK TO OUTPUT tAC3 tAC2 (CL = 3) (CL = 2) 7 ns 8 ns REFRESH INTERVAL 64 ms description The TM2SJ64EPN is a 16M-byte, 144-pin small-outline dual-in-line memory module (SODIMM). The SODIMM is composed of eight TMS626812ADGE, 2 097 152 |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES ly, and Hidden Refresh D Serial Presence-Detect (SPD) Using EEPROM D Ambient Temperature Range 0°C to 70°C D Gold-Plated Contacts description The TM2EJ64DPN is a 16M-byte, 144-pin, small outline dual-in-line memory module (SODIMM). The SODIMM is com |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use With Socket D High-Speed, Low-Noise LVTTL Interface D Long Refresh Period: 32 ms (2 048 Cycles) D 3-State Output D Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use With Socket D High-Speed, Low-Noise LVTTL Interface D Long Refresh Period: 32 ms (2 048 Cycles) D 3-State Output D Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and |
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Texas Instruments |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES Pin Dual-In-Line Memory Module (DIMM) Without Buffer for Use With Socket D High-Speed, Low-Noise LVTTL Interface D Long Refresh Period: 32 ms (2 048 Cycles) D 3-State Output D Extended-Data-Out (EDO) Operation With CAS-Before-RAS (CBR), RAS-Only, and |
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Desde 2024. D4U Semiconductor.
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