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ANPEC |
P-Channel MOSFET Pin Description • -40V/-45A, RDS(ON)= 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications GD S Top View of TO-252 S • P |
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apm |
802.11b/g/n Wireless LAN+NFC |
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Sinopower |
N-Channel MOSFET • 100V/16A, RDS(ON)= 80mΩ(typ.) @ VGS= 10V R= DS(ON) 130mΩ(typ.) @ V= GS 4.5V • ESD Protected • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in TV Inverter. N-Channel Enhanc |
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ANPEC |
N-Channel MOSFET • 25V/40A, RDS(ON)=10.5mΩ (typ.) @ VGS=10V RDS(ON)=16mΩ (typ.) @ VGS=4.5V • Super High Dense Cell Design • Avalanche Rated • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Applications • Power Management in Desktop Compu |
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Anpec |
Dual MOSFET Pin Description • N-Channel 30V/8A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 30mΩ (typ.) @ VGS = 4.5V • P-Channel -30V/-7A, RDS(ON) = 40mΩ (typ.) @ VGS = -10V RDS(ON) = 62mΩ (typ.) @ VGS = -4.5V • Super High Dense Cell Design • Reliable and Rugg |
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ANPEC |
N-Channel MOSFET Pin Description • 30V/12A, RDS(ON)=100mΩ(max) @ V =10V GS RDS(ON)=200mΩ(max) @ VGS=4.5V • Super High Dense Cell Design • High Power and Current Handling Capability • TO-252 and SOT-223 Packages Applications • Switching Regulators • Switchi |
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Etc |
Dual MOSFET • N-Channel 30V/5A, RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V Pin Description S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 • P-Channel -30V/-3.5A, RDS(ON)=85mΩ(typ.) @ VGS=-10V RDS(ON)=135mΩ(typ.) @ VGS=-4.5V SO-8 • • • Super High D |
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Anpec Electronics Coropration |
P-Channel MOSFET Pin Description • -30V/-13A, R= DS(ON) 7mΩ (typ.) @ V =-20V GS R= DS(ON) 8mΩ (typ.) @ V =-10V GS R= DS(ON) 12mΩ (typ.) @ V =-4.5V GS • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free and Green Device |
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Anpec Electronics Coropration |
Dual N-Channel MOSFET Pin Description • 30V/6A , RDS(ON)=21mΩ(typ.) @ V =10V GS RDS(ON)=27mΩ(typ.) @ VGS=4.5V • Super High Dense Cell Design for Extremely Low R DS(ON) • Reliable and Rugged • SO-8 Package Applications SO-8 S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 |
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Anpec Electronics Coropration |
P-Channel MOSFET • -30V/-8A, R= DS(ON) 16mΩ (typ.) @ V =-10V GS R= DS(ON) 24mΩ (typ.) @ V =-4.5V GS • Super High Dense Cell Design • Reliable and Rugged • SOP-8 Package • Lead Free and Green Devices Available (RoHS Compliant) Pin Description D D D D S |
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Anpec Electronics Coropration |
P-Channel MOSFET • -30V/-9A, RDS(ON) = 16mΩ(typ.) @ VGS = -10V R DS(ON) = 24mΩ(typ.) @ V GS = -4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) P-Channel Enhancement Mode MOSFET Pin Descr |
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Anpec |
Dual N-Channel MOSFET • 60V/4A, R DS(ON) = 60mΩ(typ.) @ V GS = 10V R DS(ON) = 72mΩ(typ.) @ V GS = 4.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free and Green Devices Available (RoHS Compliant) Pin Description D D D D S G S G Top V |
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Anpec Electronics Coropration |
N-Channel MOSFET • 30V/7A, RDS(ON)=15mΩ(typ.) @ VGS=10V RDS(ON)=22mΩ(typ.) @ VGS=5V Pin Description • Super High Dense Cell Design www.DataSheet4U.com • Reliable and Rugged • Lead Free Available (RoHS Compliant) G D S Top View of SOT-223 (2) D Applications • • S |
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Anpec Electronics Coropration |
N-Channel MOSFET • 25V/50A, RDS(ON)=8mΩ (Typ.) @ VGS=10V RDS(ON)=15mΩ (Typ.) @ VGS=4.5V Pin Description G D S • • • • Super High Dense Cell Design Reliable and Rugged Avalanche Rated Lead Free and Green Devices Available (RoHS Compliant) G Top View of TO-252 D |
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ANPEC |
P-Channel MOSFET • -40V/-45A, RDS(ON)= 13mΩ (typ.) @ VGS=-10V RDS(ON)= 19mΩ (typ.) @ VGS=-4.5V Pin Description G D S • • • Super High Dense Cell Design Reliable and Rugged Lead Free and Green Devices Available (RoHS Compliant) Top View of TO-252 S Applications |
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ANPEC |
Dual MOSFET • N-Channel 40V/7.5A, RDS(ON)=25mΩ (typ.) @ VGS=10V RDS(ON)=35mΩ (typ.) @ VGS=4.5V • P-Channel -40V/-6A, RDS(ON)=37mΩ (typ.) @ V= GS -10V RDS(ON)=49mΩ (typ.) @ V =-4.5V GS • Super High Dense Cell Design • Reliable and Rugged • Lead Fr |
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ART CHIP |
Dual P-Channel MOSFET -30V/-4.9A, RDS(on)=53mΩ(typ.)@VGS=-10V RDS(on)=53mΩ(typ.)@VGS=-4.5V Supper High Density Cell Design Reliable and Rugged SO-8 Package Pin Description SO-8 P-Channel Mosfet Ordering and Marking Information APM4953K: Package Code K: SO-8 Operation |
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Anpec Electronics |
Dual MOSFET • N-Channel 30V/7A, RDS(ON) =20mΩ (typ.) @ VGS = 10V RDS(ON) =27mΩ (typ.) @ VGS = 4.5V P-Channel -30V/-5A, RDS(ON) =38mΩ (typ.) @ VGS =-10V RDS(ON) =46mΩ (typ.) @ VGS =-4.5V Pin Description www.DataSheet4U.com • Top View of SOP − 8 (8) D1 (7) D1 |
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ANPEC |
Dual-Channel MOSFET • N-Channel 40V/6.5A, RDS(ON) = 20mΩ (typ.) @ VGS = 10V RDS(ON) = 28mΩ (typ.) @ VGS = 4.5V Pin Description D1 D1 D2 D2 S1 G1 S2 G2 • P-Channel -40V/-5A, RDS(ON) = 35mΩ (typ.) @ VGS =-10V RDS(ON) = 48mΩ (typ.) @ VGS =-4.5V Top View of SOP − 8 • • |
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ANPEC |
N-Channel MOSFET • 40V/57A, RDS(ON)=8.2mΩ (typ.) @ VGS=10V RDS(ON)=13mΩ (typ.) @ VGS=5V Pin Description • • Super High Dense Cell Design Reliable and Rugged Top View of TO-252 D Applications • Power Management in LCD monitor/TV inverter. G S N-Channel MOSFET O |
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Desde 2024. D4U Semiconductor.
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